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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D091
BLF378 VHF push-pull power MOS transistor
Product specification Supersedes data of 1996 Oct 17 1998 Jul 29
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
FEATURES * High power gain * Easy power control * Good thermal stability * Gold metallization ensures excellent reliability. APPLICATIONS * Broadcast transmitter applications in the VHF frequency range. DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic caps. The mounting flange provides the common source connection for the transistors. CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
1 2
BLF378
PINNING - SOT262A1 PIN 1 2 3 4 5 SYMBOL d1 d2 g1 g2 s DESCRIPTION drain 1 drain 2 gate 1 gate 2 source
d g s g 5 3
Top view
5 4
MAM098
d
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA RF performance at Th = 25 C in a push-pull common source test circuit. MODE OF OPERATION CW, class-AB 225 Note 1. Assuming a 3rd order amplitude transfer characteristic, 1 dB gain compression corresponds with 30% synchronized input / 25% synchronized output compression in television service (negative modulation, CCIR system). WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 50 250 f (MHz) VDS (V) PL (W) Gp (dB) >14 typ. 16 Gp (dB)(1) <1 typ. 0.6 D (%) >50 typ. 55
1998 Jul 29
2
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS - - - -65 - MIN.
BLF378
MAX.
UNIT
Per transistor section unless otherwise specified VDSS VGSS ID Ptot Tstg Tj drain-source voltage gate-source voltage drain current (DC) storage temperature junction temperature 110 20 18 500 150 200 V V A W C C
total power dissipation Tmb 25 C total device; both sections equally loaded -
THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h PARAMETER CONDITIONS VALUE 0.35 0.15 UNIT K/W K/W
thermal resistance from junction to mounting base total device; both sections equally loaded thermal resistance from mounting base to heatsink total device; both sections equally loaded
MRA988
handbook, halfpage
100
handbook, halfpage
500
MGE616
ID (A)
Ptot (W)
400 (2) (1) (1) (2) 300
10 200
100
1
1
10
100 VDS (V)
500
0
0
40
80
120 Th (C)
160
Total device; both sections equally loaded. (1) Current is this area may be limited by RDSon. (2) Tmb = 25 C.
Total device; both sections equally loaded. (1) Continuous operation. (2) Short-time operation during mismatch.
Fig.2 DC SOAR.
Fig.3 Power derating curves.
1998 Jul 29
3
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL Per transistor section V(BR)DSS IDSS IGSS VGSth VGS gfs gfs1/gfs2 RDSon IDSX Cis Cos Crs Cd-f drain-source breakdown voltage VGS = 0; ID = 50 mA drain-source leakage current gate-source leakage current gate-source threshold voltage gate-source voltage difference of both transistor sections forward transconductance forward transconductance ratio of both transistor sections on-state drain current input capacitance output capacitance feedback capacitance drain-flange capacitance VGS = 0; VDS = 50 V VGS = 20 V; VDS = 0 ID = 50 mA; VDS = 10 V ID = 50 mA; VDS = 10 V ID = 5 A; VDS = 10 V ID = 5 A; VDS = 10 V 110 - - 2.0 - 4.5 0.9 - - - - - - - - - - - 6.2 - 0.2 25 480 190 14 5.4 - PARAMETER CONDITIONS MIN. TYP.
BLF378
MAX.
UNIT
V mA A V mV S
2.5 1 4.5 100 - 1.1 0.3 - - - - -
drain-source on-state resistance ID = 5 A; VGS = 10 V VGS = 10 V; VDS = 10 V VGS = 0; VDS = 50 V; f = 1 MHz VGS = 0; VDS = 50 V; f = 1 MHz VGS = 0; VDS = 50 V; f = 1 MHz
A pF pF pF pF
handbook, halfpage
0
MGE623
handbook, halfpage
30
MGE622
T.C. (mV/K) -1
ID (A) 20
-2
-3 10 -4
-5 10-2
10-1
0 1 ID (A) 10 0 5 10 VGS (V) 15
VDS = 10 V.
VDS = 10 V; Tj = 25 C.
Fig.4
Temperature coefficient of gate-source voltage as a function of drain current; typical values per section.
Fig.5
Drain current as a function of gate-source voltage; typical values per section.
1998 Jul 29
4
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF378
handbook, halfpage
400
MGE621
handbook, halfpage
1200
MGE615
RDSon (m) 300
C (pF) 800
200
Cis 400
100
Cos
0 0 50 100 Tj (C) 150
0 0 20 40 VDS (V) 60
ID = 5 A; VGS = 10 V.
VGS = 0; f = 1 MHz.
Fig.6
Drain-source on-state resistance as a function of junction temperature; typical values per section.
Fig.7
Input and output capacitance as functions of drain-source voltage; typical values per section.
handbook, halfpage
400
MGE620
Crs (pF) 300
200
100
0 0 10 20 30 40 50 VDS (V)
VGS = 0; f = 1 MHz.
Fig.8
Feedback capacitance as a function of drain-source voltage; typical values per section.
1998 Jul 29
5
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
APPLICATION INFORMATION
BLF378
Class-AB operation RF performance in CW operation in a common source class-AB circuit. Th = 25 C; Rth mb-h = 0.15 K/W unless otherwise specified. RGS = 2.8 per section; optimum load impedance per section = 0.74 + j2 (VDS = 50 V). MODE OF OPERATION CW, class-AB f (MHz) 225 225 Note 1. Assuming a 3rd order amplitude transfer characteristic, 1 dB gain compression corresponds with 30% synchronized input / 25% synchronized output compression in television service (negative modulation, CCIR system). Ruggedness in class-AB operation The BLF378 is capable of withstanding a load mismatch corresponding to VSWR = 7 : 1 through all phases under the conditions: VDS = 50 V; f = 225 MHz at rated output power. VDS (V) 50 45 IDQ (A) 2 x 0.5 2 x 0.5 PL (W) 250 250 Gp (dB) >14 typ. 16 typ. 15 Gp (dB)(1) <1 typ. 0.6 typ. 1 D (%) >50 typ. 55 typ. 60
1998 Jul 29
6
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF378
MGE614
handbook, halfpage
20
handbook, halfpage
60
MGE612
(1) Gp (dB) (2) D (%) (1) 40 (2)
10
20
0 0 100 200 PL (W) Class-AB operation; VDS = 50 V; IDQ = 2 x 0.5 A; f = 225 MHz; ZL = 0.74 + j2 (per section); RGS = 2.8 (per section). (1) Th = 25 C. (2) Th = 70 C. 300
0 0 100 200 PL (W) 300
Class-AB operation; VDS = 50 V; IDQ = 2 x 0.5 A; f = 225 MHz; ZL = 0.74 + j2 (per section); RGS = 2.8 (per section). (1) Th = 25 C. (2) Th = 70 C.
Fig.9
Power gain as a function of load power; typical values per section.
Fig.10 Efficiency as a function of load power; typical values per section.
handbook, halfpage
400
MGE613
PL (W) 300 (1) (2)
200
100
0 0 5 10 Pi (W) 15
Class-AB operation; VDS = 50 V; IDQ = 2 x 0.5 A; f = 225 MHz; ZL = 0.74 + j2 (per section); RGS = 2.8 (per section). (1) Th = 25 C. (2) Th = 70 C.
Fig.11 Load power as a function of input power; typical values per section.
1998 Jul 29
7
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k, full pagewidth
1998 Jul 29
R2 C10 A R3 C11 C8 R4 D.U.T. L1 C3 L4 L6 L8 L10 50 input C1 R1 C2 L2 C5 C6 C7 C4 L3 L5 L7 L9 L11
Philips Semiconductors
+VDD1 C14
VHF push-pull power MOS transistor
C22 C23
R8 C15
L14
C24 C16
,,, ,,, ,,,, ,,, ,,, ,,,,
L15 L12 L18 L20 C20 C21 C28 C29 L13 L19 L21 R5 L16 C9 C12 A C18 R6 C13 C35 +VDD1 R11 IC1 R7 C38 C37 C36 C19 C27 C26 C17 C25 R9 L17
C31
C33 R10
,,
L22
C30 C34
C32
,,
L23 L24
MGE617
50 output
8
f = 225 MHz.
Product specification
+VDD2
BLF378
Fig.12 Test circuit for class-AB operation.
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
List of components class-AB test circuit (see Figs 12 and 13). COMPONENT C1, C2 C3, C4, C31, C32 C5 C6, C30 C7 C8, C9, C15, C18 C10, C13, C14, C19, C36 C11, C12 C16, C17 C20 C21 C22, C27, C37, C38 C23, C26, C35 C24, C25 C28 DESCRIPTION multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 film dielectric trimmer film dielectric trimmer multilayer ceramic chip capacitor; note 1 MKT film capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor; note 1 electrolytic capacitor multilayer ceramic chip capacitor; note 1 film dielectric trimmer multilayer ceramic chip capacitor; note 1 electrolytic capacitor multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 stripline; note 2 semi-rigid cable; note 3 VALUE 27 pF, 500 V 3 x 18 pF in parallel, 500 V 4 to 40 pF 2 to 18 pF 100 pF, 500 V 1 F, 63 V 100 nF, 50 V 2 x 1 nF in parallel, 500 V 220 F, 63 V 3 x 33 pF in parallel, 500 V 2 to 9 pF 1 nF, 500 V 10 F, 63 V 2 x 470 pF in parallel, 500 V 2 x 10 pF in parallel + 18 pF, 500 V 2 x 5.6 pF in parallel, 500 V 5.6 pF, 500 V 50 50 4.8 x 80 mm ext. conductor length 80 mm ext. dia 3.6 mm 6 x 24 mm 6 x 14.5 mm 6 x 4.4 mm 6 x 3.2 mm 6 x 15 mm DIMENSIONS
BLF378
CATALOGUE No.
2222 809 08002 2222 809 09006
2222 371 11105 2222 852 47104
2222 809 09005
C29 C33, C34 L1, L3, L22, L24 L2, L23
L4, L5 L6, L7 L8, L9 L10, L11 L12, L13 L14, L17 L15, L16
stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 grade 3B Ferroxcube wideband HF choke 134 turns enamelled 2 mm copper wire
43 43 43 43 43 2 in parallel 40 nH
4312 020 36642 space 1 mm int. dia. 10 mm leads 2 x 7 mm
1998 Jul 29
9
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF378
COMPONENT L18, L19 L20, L21 R1 R2, R7 R3, R6 R4, R5 R8, R9 R10 R11 IC1 Notes
DESCRIPTION stripline; note 2 stripline; note 2 metal film resistor 10 turns potentiometer metal film resistor metal film resistor metal film resistor metal film resistor metal film resistor voltage regulator 78L05
VALUE 43 43 4 x 0.4 W, 10 50 k 0.4 W, 1 k 2 x 0.4 W, 5.62 in parallel 1 W, 10 , 5% 4 x 1 W, 10 in parallel 1 W, 5.11 k
DIMENSIONS 6 x 13 mm 6 x 29.5 mm
CATALOGUE No.
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines L1, L3 to L13, L18 to L22 and L24 are on a double copper-clad printed-circuit board with glass microfibre PTFE dielectric (r = 2.2); thickness 116 inch; thickness of copper sheet 2 x 35 m. 3. Semi-rigid cables L2 and L23 are soldered on to striplines L1 and L24.
1998 Jul 29
10
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF378
handbook, full pagewidth
119
130
strap strap
strap Hollow rivets strap Hollow rivets
strap 100 strap
strap strap
C24 VDD1 L2 L1 C1 50 input R1 C2 C4 C13 R6 L3 slider R7 R11 C38 IC1 to R2,R7 C36 C16 C37 C11 C14 L14 R8 L14 L15 L12 C20 L13
C22 C23 L22 VDD1 R10 50 output
C15
C35 slider R2
C8
C3
C10 R3 R4 L4 C6 L6 L8 L10 C5 C7 L7 L9 L11 L5 R5 C9
C30 C31C33 L18 C28 L20 C21 C29 L19 L21 C34 C32 L16 VDD2 L23 C26 C27
C12
C17
C18
L17 R9 L17 C19 C25
L24
MBC436
Dimensions in mm. The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as an earth. Earth connections are made by means of copper straps for a direct contact between upper and lower sheets.
Fig.13 Printed-circuit board and component layout for 225 MHz class-AB test circuit.
1998 Jul 29
11
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF378
handbook, halfpage
2
MGE611
handbook, halfpage
3
MGE625
zi () 1 ri
ZL () 2
XL
0 RL
xi -1
1
-2 150
200
f (MHz)
250
0 150
200
f (MHz)
250
Class-AB operation; VDS = 50 V; IDQ = 2 x 0.5 A; RGS = 2.8 (per section); PL = 250 W.
Class-AB operation; VDS = 50 V; IDQ = 2 x 0.5 A; RGS = 2.8 (per section); PL = 250 W.
Fig.14 Input impedance as a function of frequency (series components); typical values per section.
Fig.15 Load impedance as a function of frequency (series components); typical values per section.
handbook, halfpage
20
MGE624
Gp (dB)
10
0 150
200
f (MHz)
250
Class-AB operation; VDS = 50 V; IDQ = 2 x 0.5 A; RGS = 2.8 (per section); PL = 250 W.
Fig.16 Power gain as a function of frequency; typical values per section.
1998 Jul 29
12
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
PACKAGE OUTLINE Flanged double-ended ceramic package; 2 mounting holes; 4 leads
BLF378
SOT262A1
D
A F
U1 q H1 C w2 M C
B
c
1
2
H
U2
p
E1 w1 M A B
E
5
A
3
b e
4
w3 M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 5.77 5.00 0.227 0.197 b 5.85 5.58 c 0.16 0.10 D e E E1 F 1.78 1.52 0.070 0.060 H 20.58 20.06 0.81 0.79 H1 17.02 16.51 0.67 0.65 p 3.28 3.02 0.129 0.119 Q 2.85 2.59 q 27.94 U1 34.17 33.90 1.345 1.335 U2 9.91 9.65 0.390 0.380 w1 0.51 0.02 w2 1.02 0.04 w3 0.25 0.01
21.98 10.27 10.29 11.05 21.71 10.05 10.03 0.865 0.404 0.405 0.435 0.855 0.396 0.395
0.230 0.006 0.220 0.004
0.112 1.100 0.102
OUTLINE VERSION SOT262A1
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
1998 Jul 29
13
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLF378
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1998 Jul 29
14
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
NOTES
BLF378
1998 Jul 29
15
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1998
SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125108/00/03/pp16
Date of release: 1998 Jul 29
Document order number:
9397 750 04189

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